tpsmc6.8 thru tpsmc43a vishay semiconductors formerly general semiconductor document number 88407 www.vishay.com 06-may-02 1 automotive surface mount transient voltage suppressors breakdown voltage 6.8 to 43v peak pulse power 1500w maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol value unit peak pulse power dissipation with a 10/1000 s waveform (1)(2) (fig. 3) p ppm minimum 1500 w peak power pulse current with a 10/1000 s waveform (1) (fig. 1) i ppm see next table a peak forward surge current 8.3ms single half sine-wave (2)(3) i fsm 200 a maximum instantaneous forward voltage at 100a (3) v f 3.5 v operating junction and storage temperature range t j, t stg 65 to +185 ? notes: (1) non-repetitive current pulse, per fig.3 and derated above t a = 25? per fig. 2 (2) mounted on 0.31 x 0.31 (8.0 x 8.0mm) copper pads to each terminal (3) measured on 8.3ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.203) max. 0.320 (8.13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.103 (2.62) 0.079 (2.06) cathode band available in uni-directional only do-214ab (smc) dimensions in inches and (millimeters) patented* mechanical data case: jedec do-214ab molded plastic body over passivated junction terminals: solder plated, solderable per mil-std-750, method 2026 polarity: the color band denotes the cathode, which is positive with respect to the anode under normal tvs operation mounting position: any weight: 0.007 oz., 0.2 g packaging codes/options: 9/3.5k per 13" reel (16mm tape), 30k/box 7/850 ea per 7" reel (16mm tape), 27k/box features designed for under the hood surface mount applications plastic package has underwriters laboratory flammability classification 94v-0 easy pick and place low profile package built-in strain relief ideal for automated placement exclusive patented par oxide passivated chip construction 1500w peak pulse power capability with a 10/1000ms waveform, repetition rate (duty cycle): 0.01% excellent clamping capability low incremental surge resistance very fast response time for devices with v (br) 10v i d are typically less than 1.0ma at t a = 150 c high temperature soldering: 250 c/10 seconds at terminals 0.185 max. (4.69 max.) 0.121 min. (3.07 min.) 0.060 min. (1.52 min.) 0.320 ref mounting pad layout *patent # s 4,980,315 5,166,769 5,278,094
tpsmc6.8 thru tpsmc43a vishay semiconductors formerly general semiconductor www.vishay.com document number 88407 2 06-may-02 electrical characteristics (t a = 25 c unless otherwise noted) t j = 150? maximum breakdown voltage maximum maximum peak pulse maximum v (br) (1) at i t reverse reverse surge clamping device (v) test stand-off leakage leakage current voltage marking current voltage at v wm at v wm i ppm (2) at i ppm device code min. max. i t (ma) v wm (v) i r ( a) i d ( a) (a) vc (v) tpsmc6.8 ddp 6.12 7.48 10.0 5.50 1000 10000 139.0 10.8 tpsmc6.8a dep 6.45 7.14 10.0 5.80 1000 10000 143.0 10.5 tpsmc7.5 dfp 6.75 8.25 10.0 6.05 500 5000 128.0 11.7 tpsmc7.5a dgp 7.13 7.88 10.0 6.40 500 5000 133.0 11.3 tpsmc8.2 dhp 7.38 9.02 10.0 6.63 200 2000 120.0 12.5 tpsmc8.2a dkp 7.79 8.61 10.0 7.02 200 2000 124.0 12.1 tpsmc9.1 dlp 8.19 10.0 1.0 7.37 50 500 109.0 13.8 tpsmc9.1a dmp 8.65 9.55 1.0 7.78 50 500 112.0 13.4 tpsmc10 dnp 9.00 11.0 1.0 8.10 20 200 100.0 15.0 tpsmc10a dpp 9.50 10.5 1.0 8.55 20 200 103.0 14.5 tpsmc11 dqp 9.90 12.1 1.0 8.92 5.0 50 92.6 16.2 tpsmc11a drp 10.5 11.6 1.0 9.40 5.0 50 96.2 15.6 tpsmc12 dsp 10.8 13.2 1.0 9.72 2.0 10 86.7 17.3 tpsmc12a dtp 11.4 12.6 1.0 10.2 2.0 10 89.8 16.7 tpsmc13 dup 11.7 14.3 1.0 10.5 2.0 10 78.9 19.0 tpsmc13a dvp 12.4 13.7 1.0 11.1 2.0 10 82.4 18.2 tpsmc15 dwp 13.5 16.5 1.0 12.1 1.0 10 68.2 22.0 tpsmc15a dxp 14.3 15.8 1.0 12.8 1.0 10 70.8 21.2 tpsmc16 dyp 14.4 17.6 1.0 12.9 1.0 10 63.8 23.5 tpsmc16a dzp 15.2 16.8 1.0 13.6 1.0 10 66.7 22.5 tpsmc18 edp 16.2 19.8 1.0 14.5 1.0 10 56.6 26.5 tpsmc18a eep 17.1 18.9 1.0 15.3 1.0 10 59.5 25.2 tpsmc20 efp 18.0 22.0 1.0 16.2 1.0 10 51.5 29.1 tpsmc20a egp 19.0 21.0 1.0 17.1 1.0 10 54.2 27.7 tpsmc22 ehp 19.8 24.2 1.0 17.8 1.0 10 47.0 31.9 tpsmc22a ekp 20.9 23.1 1.0 18.8 1.0 10 49.0 30.6 tpsmc24 elp 21.6 26.4 1.0 19.4 1.0 10 43.2 34.7 tpsmc24a emp 22.8 25.2 1.0 20.5 1.0 10 45.2 33.2 tpsmc27 enp 24.3 29.7 1.0 21.8 1.0 10 38.4 39.1 tpsmc27a epp 25.7 28.4 1.0 23.1 1.0 10 40.0 37.5 tpsmc30 eqp 27.0 33.0 1.0 24.3 1.0 10 34.5 43.5 tpsmc30a erp 28.5 31.5 1.0 25.6 1.0 10 36.2 41.4 tpsmc33 esp 29.7 36.3 1.0 26.8 1.0 10 31.4 47.7 tpsmc33a etp 31.4 34.7 1.0 28.2 1.0 10 32.8 45.7 tpsmc36 eup 32.4 39.6 1.0 29.1 1.0 10 28.8 52.0 tpsmc36a evp 34.2 37.8 1.0 30.8 1.0 10 30.1 49.9 tpsmc39 ewp 35.1 42.9 1.0 31.6 1.0 10 26.6 56.4 tpmsc39a exp 37.1 41.0 1.0 33.3 1.0 10 27.8 53.9 tpsmc43 eyp 38.7 47.3 1.0 34.8 1.0 10 24.2 61.9 tpsmc43a ezp 40.9 45.2 1.0 36.8 1.0 10 25.3 59.3 notes: (1) v (br) measured after i t applied for 300 s, i t = square wave pulse or equivalent (2) surge current waveform per fig. 3 and derate per fig. 2 (3) all terms and symbols are consistent with ansi/ieee c62.35
tpsmc6.8 thru tpsmc43a vishay semiconductors formerly general semiconductor document number 88407 www.vishay.com 06-may-02 3 ratings and characteristic curves (t a = 25 c unless otherwise noted) fig.1 peak pulse power rating curve 0.1 1.0 10 100 0.1 s 1.0 s10 s 100 s 1.0ms 10ms p ppm, peak power (kw) c j , junction capacitance, pf v (br) , breakdown voltage (v) 10 100 1,000 10,000 1 10 100 200 td, pulse width, sec. fig. 4 typical junction capacitance fig. 2 pulse derating curve 0 25 50 75 100 0 50 100 150 200 peak pulse power (p pp ) or current (i pp ) derating in percentage (%) t a , ambient temperature ( c) t j = 25 c f = 1 mhz vsig = 50mvp-p v r measured at zero bias v r measured at stand-off voltage, v wm t a = 25 c non-repetitive pulse waveform shown in fig. 3 0.31 x 0.31" (8.0 x 8.0mm) copper pad areas 200 100 number of cycles at 60 hz i fsm, peak forward surge current (a) 10 50 11050 5 100 t j = t j max 8.3ms single half sine-wave (jedec method) fig. 5 maximum non-repetitive peak forward surge current 0 50 100 150 i ppm peak pulse current, % i rsm fig. 3 pulse waveform t j = 25 c pulse width (td) is defined as the point where the peak current decays to 50% of i ppm tr = 10 sec. peak value i ppm half value ipp i ppm 2 td 10/1000 sec. waveform as defined by r.e.a. 0 1.0 2.0 3.0 4.0 t time (ms)
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